View 2SC2308_4235777.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2SC458, 2SC2308
Silicon NPN Epitaxial
REJ03G0681-0200 (Previous ADE-208-1043) Rev.2.00 Aug.10.2005
Application
* Low frequency amplifier * Complementary pair with 2SA1029 and 2SA1030
Outline
RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1))
1. Emitter 2. Collector 3. Base
3 2 1
Absolute Maximum Ratings
(Ta = 25C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Emitter current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC IE PC Tj Tstg 2SC458 30 30 5 100 -100 200 150 -55 to +150 2SC2308 55 50 5 100 -100 200 150 -55 to +150 Unit V V V mA mA mW C C
Rev.2.00 Aug 10, 2005 page 1 of 6
2SC458, 2SC2308
Electrical Characteristics
(Ta = 25C)
Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter to base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter voltage Gain bandwidth product Collector output capacitance Noise figure Small signal input impedance Small signal voltage feedback ratio Small signal current transfer ratio Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE*1 VCE(sat) VBE fT Cob NF hie hre hfe Min 30 30 5 -- -- 100 -- -- -- -- -- -- -- -- 2SC458 Typ -- -- -- -- -- -- -- 0.67 230 1.8 4 16.5 70 130 Max -- -- -- 0.5 0.5 500 0.2 0.75 -- 3.5 10 -- -- -- -- 2SC2308 Min Typ Max 55 -- -- 50 5 -- -- 160 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 0.67 230 1.8 4 16.5 70 130 11.0 -- -- 0.5 0.5 320 0.2 0.75 -- 3.5 10 -- -- -- -- S Unit V V V A A V V MHz pF dB k x 10-6 Test conditions IC = 10 A, IE = 0 IC = 1 mA, RBE = IE = 10 A, IC = 0 VCB =18 V, IE = 0 VEB = 2 V, IC = 0 VCE = 12 V, IC = 2 mA IC = 10 mA, IB = 1 mA VCE = 12 V, IC = 2 mA VCE = 12 V, IC = 2 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 6 V, IC = 0.1 mA, f = 1 kHz, Rg = 500 VCE = 5V, IC = 0.1mA, f = 270 Hz
-- 11.0 hoe Small signal output admittance Note: 1. The 2SC458 is grouped by hFE as follows. B C D 2SC458 100 to 200 160 to 320 250 to 500
Rev.2.00 Aug 10, 2005 page 2 of 6
2SC458, 2SC2308
Main Characteristics
Maximum Collector Dissipation Curve
Collector Power Dissipation PC (mW)
300
Typical Output Characteristics
10
P
60
C
=
20
Collector Current IC (mA)
8
50 40
0m
W
200
6
30
4
100
20 10 A IB = 0
2
0
50
100
150
0
5
10
15
20
25
Ambient Temperature Ta (C)
Collector to Emitter Voltage VCE (V)
DC Current Transfer Ratio vs. Collector Current
300
Typical Transfer Characteristics
5
DC Current Transfer Ratio hFE
Collector Current IC (mA)
4
VCE = 12 V
VCE = 12 V
7 Ta = 5C
200
3
25
2
100
1
0
0.2
0.4
0.6
0.8
1.0
0 0.03
0.1
0.3
1.0
3
10
30
Base to Emitter Voltage VBE (V)
Small Signal Current Transfer Ratio vs. Collector Current
Small Signal Current Transfer Ratio hfe
300
Collector Current IC (mA)
Base to Emitter Voltage vs. Ambient Temperature
Base to Emitter Voltage VBE (V)
0.9 0.8
VCE = 12 V IC = 2 mA
f = 270 Hz VCE = 12 V 200
0.7
0.6
100
0.5
0 0.03
0.1
0.3
1.0
3
10
30
0.4 -20
0
20
40
60
80
Collector Current IC (mA)
Ambient Temperature Ta (C)
Rev.2.00 Aug 10, 2005 page 3 of 6
2SC458, 2SC2308
Collector Output Capacitance vs. Collector to Base Voltage Collector Output Capacitance Cob (pF) Emitter Input Capacitance Cib (pF)
5 4 IE = 0 f = 1 MHz 5 IC = 0 f = 1 MHz 4
Emitter Input Capacitance vs. Emitter to Base Voltage
3
3
2
2
1
1
0
4
8
12
16
20
0
2
4
6
8
10
Collector to Base Voltage VCB (V)
Emitter to Base Voltage VEB (V)
Contours of Constant Noise Figure Signal Source Resistance Rg (k)
14 12 10 2 1.0 0.5 0.2 8 0.1 0.05 0.1 NF = 1dB 2 6 3 4 6 0.2 0.5 VCE = 6 V f = 120 Hz 1.0 2.0 8
Contours of Constant Noise Figure Signal Source Resistance Rg (k)
10 5 VCE = 6 V f = 1 kHz 2 1.0 0.5 0.2 0.1 8 0.05 0.1 NF = 0.5 dB 1.0 2 3 4 0.2 0.5 1.0 2.0 8 4 3
10 5
Collector Current IC (mA)
Collector Current IC (mA)
Contours of Constant Noise Figure Signal Source Resistance Rg (k)
10 5 VCE = 6 V f = 10 kHz 2 4 20
Noise Figure vs. Frequency
1
Noise Figure NF (dB)
2
16
IC = 0.1 mA Rg = 500 VCE = 6 V
NF
1.0 0.5
=0
12
1 2
.5 d
B
8
0.2 0.1 0.05
4
4 0.1 0.2 0.5 1.0 2.0 0 30 100 300 1k 3k 10k 30k
Collector Current IC (mA)
Frequency f (Hz)
Rev.2.00 Aug 10, 2005 page 4 of 6
2SC458, 2SC2308
Noise Figure vs. Collector to Emitter Voltage
Percentage of Relative to IC = 0.1mA
8 IC = 0.1 mA Rg = 500 f = 1kHz
h Parameter vs. Collector Current
100 50 20 VCE = 6 V 10 f = 270 Hz 5 hie 2 hfehre 1.0 0.5 h
oe
Noise Figure NF (dB)
6
hoe
hre
4
hfe
2
0.2 0.1 0.05 0.02 0.01 0.010.02 0.05 0.1 0.2 0.5 1.0 2
hie
0 1 2 5 10 20 30
5 10
Collector to Emitter Voltage VCE (V) h Parameter vs. Collector to Emitter Voltage
Percentage of Relative to VCE = 5V
1.8 IC = 0.1 mA f = 270 Hz 1.6 hre hoe
Collector Current IC (mA)
1.4
1.2 hoe 1.0 hfe hie 0.8 0.5 1.0 2 5 hre 10 20 hfe hie
Collector to Emitter Voltage VCE (V)
Rev.2.00 Aug 10, 2005 page 5 of 6
2SC458, 2SC2308
Package Dimensions
JEITA Package Code
SC-43A
RENESAS Code
PRSS0003DA-A
Package Name TO-92(1) / TO-92(1)V
MASS[Typ.] 0.25g
Unit: mm
4.8 0.3
3.8 0.3
2.3 Max
0.55 Max
0.7
0.60 Max
12.7 Min
5.0 0.2
0.5 Max
1.27 2.54
Ordering Information
Part Name 2SC458BTZ 2SC458CTZ 2SC458DTZ 2SC2308CTZ 2500 Quantity Shipping Container Hold Box, Radial Taping
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Aug 10, 2005 page 6 of 6
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. Renesas Technology Corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. All information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by Renesas Technology Corp. without notice due to product improvements or other reasons. It is therefore recommended that customers contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor for the latest product information before purchasing a product listed herein. The information described here may contain technical inaccuracies or typographical errors. Renesas Technology Corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. Please also pay attention to information published by Renesas Technology Corp. by various means, including the Renesas Technology Corp. Semiconductor home page (http://www.renesas.com). 4. When using any or all of the information contained in these materials, including product data, diagrams, charts, programs, and algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. Renesas Technology Corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. Renesas Technology Corp. semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Renesas Technology Corp. or an authorized Renesas Technology Corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. 6. The prior written approval of Renesas Technology Corp. is necessary to reprint or reproduce in whole or in part these materials. 7. If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. 8. Please contact Renesas Technology Corp. for further details on these materials or the products contained therein.
RENESAS SALES OFFICES
Refer to "http://www.renesas.com/en/network" for the latest and detailed information. Renesas Technology America, Inc. 450 Holger Way, San Jose, CA 95134-1368, U.S.A Tel: <1> (408) 382-7500, Fax: <1> (408) 382-7501 Renesas Technology Europe Limited Dukes Meadow, Millboard Road, Bourne End, Buckinghamshire, SL8 5FH, U.K. Tel: <44> (1628) 585-100, Fax: <44> (1628) 585-900 Renesas Technology Hong Kong Ltd. 7th Floor, North Tower, World Finance Centre, Harbour City, 1 Canton Road, Tsimshatsui, Kowloon, Hong Kong Tel: <852> 2265-6688, Fax: <852> 2730-6071 Renesas Technology Taiwan Co., Ltd. 10th Floor, No.99, Fushing North Road, Taipei, Taiwan Tel: <886> (2) 2715-2888, Fax: <886> (2) 2713-2999 Renesas Technology (Shanghai) Co., Ltd. Unit2607 Ruijing Building, No.205 Maoming Road (S), Shanghai 200020, China Tel: <86> (21) 6472-1001, Fax: <86> (21) 6415-2952 Renesas Technology Singapore Pte. Ltd. 1 Harbour Front Avenue, #06-10, Keppel Bay Tower, Singapore 098632 Tel: <65> 6213-0200, Fax: <65> 6278-8001 Renesas Technology Korea Co., Ltd. Kukje Center Bldg. 18th Fl., 191, 2-ka, Hangang-ro, Yongsan-ku, Seoul 140-702, Korea Tel: <82> 2-796-3115, Fax: <82> 2-796-2145
http://www.renesas.com
Renesas Technology Malaysia Sdn. Bhd. Unit 906, Block B, Menara Amcorp, Amcorp Trade Centre, No.18, Jalan Persiaran Barat, 46050 Petaling Jaya, Selangor Darul Ehsan, Malaysia Tel: <603> 7955-9390, Fax: <603> 7955-9510
(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

▲Up To Search▲

Price & Availability of 2SC2308

	To Download 2SC2308 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .